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Class 12 Physics Chapter 14: Semiconductor Electronics: Materials, Devices and Simple Circuits Assertion-reason questions with answers

2 assertion-reason questions on Semiconductor Electronics: Materials, Devices and Simple Circuits, each with its answer and the reason, written from the NCERT chapter. For the CBSE board, JEE Main and NEET, which are set from the same NCERT chapter. Open a question's solution to check your working; then take the free test to find your next chapter. Each question gives an Assertion (A) and a Reason (R); choose how they stand to each other.

Question 1
Assertion (A): The forward current of a p-n junction diode is made up of the diffusion of injected minority carriers on each side of the junction. Reason (R): Forward bias lowers the barrier, so electrons cross from n to p and holes from p to n, where each kind is a minority carrier.
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Answer: (a) Both A and R are true, and R is the correct explanation of A.

Both are true. Because the lowered barrier lets majority carriers cross to the other side, they arrive there as minority carriers (minority carrier injection) and diffuse away from the junction edge; the sum of these hole and electron diffusion currents is the forward current. R explains A.

Question 2
Assertion (A): A gallium arsenide crystal grown with more gallium than arsenic can differ in conduction type from ideal 1:1 GaAs. Reason (R): Silicon is made n-type by adding a pentavalent impurity such as phosphorus.
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Answer: (b) Both A and R are true, but R is not the correct explanation of A.

Both are true. In a compound semiconductor a change in the stoichiometric ratio (Ga-rich, such as Ga₁.₁As₀.₉) can change the type, the defects acting as dopants. R is about adding a foreign dopant to an elemental semiconductor, which does not explain A.

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